Work

Rhombohedral R 3 Phase of Mn‐Doped Hf 0.5 Zr 0.5 O 2 Epitaxial Films with Robust Ferroelectricity

Year: 2024

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202406038

Authors: Jiasheng Guo, Lei Tao, Xing Xu, Lingxuan Hou, Ce‐Wen Nan, Shixuan Du, Chonglin Chen, Jing Ma

Institutions: State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, The University of Texas at San Antonio, Songshan Lake Materials Laboratory

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2430748209, G2853204155, G6600486544

OpenAlex ID: W4403262893

FWCI: 2.878

Cites: 52

Cited by: 28

Related to: 10