Year: 2024
Type: article
Abstract: In this work, a new ALD process for palladium metal thin films using dichlorobis(triethylphosphine)palladium(II) (PdCl2(PEt3)2) and 1,4‐bis(trimethylsilyl)‐1,4‐dihydropyrazine ((Me3Si)2DHP) as reactants, is developed. The metal precursor is chosen based on the known reactivity of metal halides with the DHP‐type reducing agents. Metallic Pd films are deposited at temperatures of 140–180 °C with a growth rate of 0.3–0.4 Å cycle−1. Furthermore using 1,4‐bis(trimethylgermyl)‐1,4‐dihydropyrazine ((Me3Ge)2DHP) as the co‐reactant yielded Pd2Ge thin films. Finally, full recyclability of the PdCl2(PEt3)2 is observed: unused molecules condensed in the exhaust tube can be collected by dissolving them into acetone, purified by recrystallization, and reused.
Source: Advanced Materials Interfaces
Institutions: University of Helsinki, Helsinki Institute of Physics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,100
Funder: ASM International
OpenAlex ID: W4403269812