Demonstration of 155-Gbaud PAM4 and PAM6 Using a Narrow High-Mesa Electro-Absorption Modulator Integrated Laser for 400 Gb/s Per Lane Transmission
Year: 2024
Type: article
Source: Journal of Lightwave Technology
Authors: Asami Uchiyama, Shinya Okuda, Toshiya Tsuji, Yohei Hokama, Mizuki Shirao, Kenichi Abe, Takeshi Yamatoya, Yasuhiro Yamauchi
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403277015
