Work

Channel Mobility With Higher-k Doped-HfO₂ for CMOS Logic

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3466843

Authors: Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Hyeong-Rak Lim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim

Institutions: Korea Advanced Institute of Science and Technology, Korea Institute of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Photoelectronic Hybrid Research Center, Korea Institute of Science and Technology, IC Design Education Center

Awards: G4304761340, G622998484, G6918809404, G921594505

OpenAlex ID: W4403277056

FWCI: 0.416

Cites: 29

Cited by: 4

Related to: 10