A Temperature-Dependent Analytical Transient Model of SiC MOSFET in Half-Bridge Circuits
Year: 2024
Type: article
Abstract: In this article, a temperature-dependent transient model of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) is proposed. The switching transient of the SiCmosfetis divided into four phases. In each phase, the operations of themosfetand its body diode are analyzed and the corresponding equivalent circuits are obtained. The analysis identifies that the$C_{gd}\times dV_{ds}/dt$and$L_{s}\times dI_{d}/dt$induced negative feedback mechanisms, excess charge extraction in the N-base of SiCmosfetbody diode and dynamic transfer characteristics at switching transient are pivotal physical characteristics. The dependence of junction temperature$T_{J1}$of low-sidemosfetand junction temperature$T_{J2}$of high-sidemosfeton the switching behavior of SiCmosfetis also analyzed and included in the proposed model. Based on the improved understanding of the switching behavior, an analytical model of SiCmosfetis derived. The analytically derived switching waveforms and switching losses are compared to the test data and good agreement is obtained.
Authors: Peng Xue, Pooya Davari
Institution: Aalborg University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4403277405