Work

Advances in High-Aspect-Ratio Deep Reactive Ion Etching of 4H-Silicon Carbide Wafers

Year: 2024

Type: article

Source: Journal of Microelectromechanical Systems

DOI: 10.1109/jmems.2024.3466769

Authors: Ningxin Li, Zhenming Liu, Ardalan Lotfi, Xinyu Jiang, Emma Long, Shubham S. Sahasrabudhe, Chris Bolton, Huma Ashraf, Farrokh Ayazi

Institution: Georgia Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Army Research Laboratory

OpenAlex ID: W4403277544

FWCI: 0.624

Cites: 42

Cited by: 6

Related to: 10