Year: 2024
Type: article
Abstract: Due to the poor quality of the silicon carbide / silicon dioxide interface realization and their thin gate oxide layer, SiCmosfets are more susceptible to charge-trapping mechanisms than siliconmosfets. These phenomena are amplified over time, resulting in decreased transistor performance and increased losses. To monitor this aging mechanism, an analog method is proposed to extract a newly discovered health indicator from the gate voltage (VGS) waveform. This is accomplished by slowing down a specific turn-onusing a dual-channel active gate driver. The online health monitoring method is then experimentally validated on a 1200 V-36 A SiCmosfetin both no-load and pulsewidth modulation conditions.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4403277630