Influence of bottom supporting columns and cooling rate on the surface shape characteristics of sapphire substrates
Year: 2024
Type: article
Abstract: The manufacturing process of sapphire substrates involves several key steps, including epitaxy, annealing, cutting, and processing. Among these, epitaxy and annealing are particularly crucial. The temperature variances along both the longitudinal and transverse axes within the furnace during the crystallization process play a significant role in determining the crystallization rate and internal structure of sapphire crystals. Furthermore, annealing sapphire serves to alleviate internal stress, enhance crystal structure, optimize physical properties, improve optoelectronic characteristics, enhance surface quality, and increase overall yield. This step is paramount in enhancing the performance and application value of sapphire materials. In order to investigate and optimize the effects of different thermal conductivities of support columns at the base and various annealing procedures on the surface characteristics of sapphire substrates, thereby improving product quality, this study conducted research by utilizing support columns made of different materials and carefully controlling the cooling rate parameters for sapphire. The findings revealed that using graphite as the base support column for the crystal furnace can reduce both the longitudinal and transverse temperature gradients within the furnace, consequently promoting crystal growth and enhancing the quality of sapphire ingots. Additionally, sapphire chips annealed using the rapid one-step annealing program exhibited the highest average warpage and bending rate variation, reaching 2.0 μm, and the average dislocation density was half that of conventionally produced chips, at 108.89 pits/cm 2 .
Source: Journal of Crystal Growth
Authors: Xiaobo Dai, Hao Li, Yang Zhang
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,020
OpenAlex ID: W4403282963