Work

4 inch 11 μm high-quality AlN thick films grown on nanopatterned sapphire substrates

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad85b9

Authors: Lei Yao, Yu Xu, Yuning Wang, Guobin Wang, Jianxi Xu, Jingjing Chen, Liang Wang, Shiping Guo, Bing Cao, Xu Ke

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Shenyang National Laboratory for Materials Science, Advanced Micro-Fabrication Equipment (China), Soochow University, Collaborative Innovation Center of Suzhou Nano Science and Technology, Key Lab of Modern Optical Technologies of Education Ministry of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G1015147028, G1047728000, G6297361716, G929977991

OpenAlex ID: W4403288759

FWCI:

Cites: 45

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Related to: 10