Work

Human Memory‐Inspired MoS 2 /BST Ferroelectric Phototransistor with Synchronous Sensory, Short‐Term and Long‐Term Memories

Year: 2024

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202414186

Authors: Chao Tan, Haijuan Wu, Zhicheng Lin, Jinxiu Liu, Lei Yang, Libin Gao, Zegao Wang

Institutions: Sichuan University, University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Sichuan Youth Science and Technology Foundation, National Natural Science Foundation of China

Awards: G2223708877, G2997890802, G3524064284, G3793135458, G6027389766, G6322642289, G6793080520, G7468610300, G7822454306

OpenAlex ID: W4403294824

FWCI: 1.538

Cites: 57

Cited by: 15

Related to: 10