Work

Investigation of Dynamic Eₒₛₛ in p-GaN Gate AlGaN/GaN HEMT

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3477605

Authors: Yifei Huang, Qimeng Jiang, Yixu Yao, Sen Huang, Xinhua Wang, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2313654935, G442552545, G7566132602, G7631395229, G7926517203

OpenAlex ID: W4403295620

FWCI: 0.289

Cites: 26

Cited by: 2

Related to: 10