Experimental Demonstration of the Improved Single-Event Irradiation Hardness of Split-Gate 4H-SiC Power MOSFET With Integrated the P+N+ Structure
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Zhiwen Zhang, Hao Yuan, Keyu Liu, Yibo Zhang, Yancong Liu, Chao Han, Xiaoyan Tang, Yuming Zhang, Qingwen Song
Institution: Xidian University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1008228683, G8552657112
OpenAlex ID: W4403295627