Work

Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor

Year: 2024

Type: article

Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

DOI: 10.1109/tcad.2024.3478091

Authors: Yang Dai, Leiyu Gao, Yukun Li, Jing Zuo, Yue Zhang, Wu Zhao

Institutions: Northwest University, Xi'an University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G1036581151, G2122263488, G2942581188, G6286061784

OpenAlex ID: W4403296862

FWCI:

Cites: 38

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Related to: 10