Comparison of single Shockley-type stacking fault expansion rates in 4H-SiC under ultraviolet illumination after hydrogen or fluorine ion implantation
Year: 2024
Type: article
Authors: Johji Nishio, Chiharu Ota, Ryosuke Iijima
Institution: Toshiba (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403325797