Work

Intense violet electroluminescence of thin SiO2 layers with SnO2 nanocrystals

Year: 2024

Type: article

Abstract: It has been shown that Sn implantation with subsequent annealing in air leads to an increase in the electroluminescence (EL) intensity of SiO 2 /Si structure by two orders of magnitude. Intense violet EL with a maximum at 3.21 eV was observed at room temperature by the naked eye at forward bias. The observed emission was attributed to radiative recombination in SnO 2 nanocrystals synthesized in SiO 2 layers. The external quantum efficiency (EQE) increased with decreasing Sn concentration The maximum external quantum efficiency was found to be 0.7 % for the silica film Sn-implanted at the lowest fluence of 2.5 × 10 16 cm −2 . The non-radiative charge transport (shunt current) through the sample and mechanism of EL excitation are discussed. It has been concluded that the Poole–Frenkel mechanism, or tunneling between traps are the most likely mechanisms of charge transport to light-emitting centers.

Source: Results in Optics

DOI: 10.1016/j.rio.2024.100750

Authors: Ivan Romanov, Irina Parkhomenko, Liudmila Vlasukova, Elke Wendler, Fadei Komarov

Institutions: Belarusian State University, Friedrich Schiller University Jena, Institute of Applied Physics

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,230

OpenAlex ID: W4403330376

FWCI:

Cites: 44

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Related to: 10