High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Siheng Chen, Peng Cui, Xin Luo, Liu Wang, Jiacheng Dai, Kaifa Qi, Tieying Zhang, Handoko Linewih, Zhaojun Lin, Xiangang Xu, Jisheng Han
Institution: Shandong University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1217742046, G1713804460, G8717687089
OpenAlex ID: W4403332724