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Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Year: 2024
Type: article
Abstract: A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing.
DOI: 10.3390/nano14201629
Authors: Penghui Lei, Qing Chang, Mingkun Xiao, Chao Ye, Pan Qi, Fangjie Shi, Yuhua Hang, Qianwu Li, Qing Peng
Institutions: Xi'an Jiaotong University, Northwestern Polytechnical University, Suzhou Research Institute, Chinese Academy of Sciences, Institute of Mechanics, University of Chinese Academy of Sciences, State Key Laboratory of Nonlinear Mechanics
Language: English
Open Access status: gold
Estimated APC paid: $3,296
OpenAlex ID: W4403335469
FWCI: 0.379
Cites: 43
Cited by: 4
Related to: 10