Year: 2024
Type: article
Abstract: The paper introduces a novel Gallium Arsenide on Silicon (GaAs-on-Si) MOSFET, formed by epitaxial deposition of a Galium Arsenide (GaAs) layer on a silicon substrate. This device offers significant improvements in analog performance over conventional Silicon MOSFETs, with a 40% increase in on-state current (ION) due to the higher electron mobility of GaAs. The paper provides a comparative analysis of the electrical characteristics and performance parameters, demonstrating the superiority of the GaAs-on-Si MOSFET. The device structure utilizes a planar configuration with GaAs as the channel material on a Si substrate fabricated through a cost-effective Molecular Beam Epitaxial (MBE) process. The study highlights enhanced analog performance metrics, making the GaAs-on-Si MOSFET a promising candidate for high-frequency and analog applications. The findings suggest that integrating GaAs with established Si technology can lead to significant advancements in semiconductor devices, offering better performance for analog integrated circuits and Radio Frequency (RF) applications. The fabrication process and detailed performance analysis underscore the potential of this novel device in advancing semiconductor technology, inspiring optimism for the future of semiconductor research and development.
Institution: Zeal College of Engineering and Research, Pune
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4403345122