Work

AI‐assisted Field Plate Design of GaN HEMT Device

Year: 2024

Type: article

Source: Advanced Theory and Simulations

DOI: 10.1002/adts.202400347

Authors: Xiaofeng Xiang, Rafid Hassan Palash, Eiji Yagyu, Scott T. Dunham, Koon Hoo Teo, Nadim Chowdhury

Institutions: University of Washington, Bangladesh University of Engineering and Technology, Mitsubishi Electric (Japan), Mitsubishi Electric Research Laboratories (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403347532

FWCI: 0.149

Cites: 20

Cited by: 1

Related to: 10