Work

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Year: 2024

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ad8624

Authors: Zhenyu 振宇 Chen 陈, Degang 德刚 Zhao 赵, Feng 锋 Liang 梁, Zongshun 宗顺 Liu 刘, Jing 静 Yang 杨, Ping 平 Chen 陈

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403355754

FWCI: 0.149

Cites: 41

Cited by: 1

Related to: 10