Year: 2024
Type: article
Abstract: High spin polarization and low resistivity of Fe 3 O 4 at room temperature have been an appealing topic in spintronics with various promising applications. High-quality Fe 3 O 4 thin films are a must to achieve the goals. In this report, Fe 3 O 4 films on different substrates (SiO 2 /Si(100), MgO(100), and MgO/Ta/SiO 2 /Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe 3 O 4 film grown on MgO/Ta/SiO 2 /Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe 3 O 4 thin films compared to cases of no or just a single buffering layer.
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
Award: G1638926095
OpenAlex ID: W4403379977