Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
Year: 2024
Type: article
Abstract: In this paper, we investigate the optical properties of a zincblende InGaN single quantum well (SQW) structure containing stacking faults (SFs). Cathodoluminescence studies revealed the presence of sharp emission features adjacent to SFs, identified as quantum wires (Qwire) via their spatial anisotropy. Scanning transmission electron microscopy provided evidence of indium rich regions adjacent to SFs which intersect the QW along the [110] and [1–10] directions, whilst atom probe tomography revealed that the indium rich regions have an elongated structure, creating a Qwire. This work sheds light on the intricate relationship between SFs and Qwires in zincblende InGaN SQW structures, offering insights into the underlying mechanisms governing their optical behavior.
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,165
Awards: G1374803137, EPSRC Manufacturing Fellowship in Gallium Nitride, G1892229035, G3323061004, G387448430, Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal), Fundamental studies of zincblende nitride structures for optoelectronic applications, G4553301434, G480511124, Fast Switching Zincblende GaN LEDs, G5478298239, Time-resolved cathodoluminescence scanning electron microscope, A LEAP 5000 XS for the UK National Atom Probe Facility, G864668184
OpenAlex ID: W4403387674