Enhancing Resistive Switching Characteristics of MoS₂-Based Memristor Through O₂ Plasma Irradiation-Induced Defects
Year: 2024
Type: article
Abstract: In this work, we report the tuning of resistive switching properties in MoS2-based memristors through varying durations of oxygen plasma exposure. Electrical transport measurements of untreated and plasma-treated memristors reveal that longer oxygen plasma treatment increases the low resistance state (LRS) current and memory window (MW) and reduces the SET/RESET voltages. Notably, graphene/MoS${}_{\text {2-x}}$Ox/graphene memristor with 18% oxygen atoms exhibits a MW$({{{\textrm {I}}_{\textrm {LRS}}}{\textrm {/}}{{\textrm {I}}_{\textrm {HRS}}}})$of approximately$10^{2}$, which is around$78.12\times $higher than that of untreated memristors. Despite the switching performance benefits, the excessive oxidation of MoS2 via$O_{2}$plasma leads to increased cycle-to-cycle variability and enhanced temperature dependency on the resistive switching characteristics. Furthermore, the near-linear modulation of conductance during long-term potentiation (LTP) and long-term depression (LTD) in MoS2-based memristors provides the excellent recognition accuracy of approximately 90% in a$784\times 100\times 10$neural network for the handwritten MNIST dataset. The comprehensive performance evaluation of oxygen-irradiated MoS2-based memristors highlights their potential for large-scale crossbar memory and synaptic arrays. This study could also serves as a valuable reference for future research on controlled defect generation in memristive devices, paving the way for advancements in neuromorphic computing architectures.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
OpenAlex ID: W4403390497