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“M”-Shaped Threshold Voltage Shift Induced by Competitive Positive/Negative Gate Switching Stress in Schottky-Type p-GaN Gate HEMTs

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3480253

Authors: Yunfeng Hu, Liang He, Meng Dong, Xinghuan Chen, Yijun Shi, Zhiyuan He, Zongqi Cai, Yiqiang Ni, Hongyue Wang, Zhizhe Wang, Yuan Li, Xiaoli Lu, Yuan Chen, Yiqiang Chen

Institutions: Xidian University, Guangzhou Institute of Technology, China Electronic Product Reliability and Environmental Test Institute, National Development and Reform Commission

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, Basic Research Laboratory

Awards: G1548816067, G169498797, G1775887743, G2629145377, G3337357, G3775849399, G3916330310, G5711862833, G7114617051, G8610215793

OpenAlex ID: W4403390504

FWCI: 0.721

Cites: 30

Cited by: 5

Related to: 10