Bottom-Gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: King Saud University
OpenAlex ID: W4403390505
