Work

Displacement Damage Effects on a CDTI-Based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

Year: 2024

Type: article

Abstract: Displacement damage effects induced by proton and neutron irradiation are explored in a capacitive deep trench charge coupled device (CCD)-on-CMOS image sensor. Dark current and charge transfer inefficiency (CTI) are investigated to exhibit, respectively, the generation and capture-emission mechanisms arising with defect clusters and point defects introduction. This article reports the trends in damage factor, trap production rate, trap cross section, and energy distribution with respect to particle fluence and annealing. CTI mitigation techniques based on the temperature and clocking of operation are discussed.

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2024.3480281

Authors: Antoine Salih Alj, Aubin Antonsanti, Alexandre Le Roch, Pierre Touron, François Roy, Arnaud Tournier, Stéphane Demiguel, Julien Michelot, Valérian Lalucaa, Cédric Virmontois, Pierre Magnan, Vincent Goiffon

Institutions: Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), STMicroelectronics (France), Thales Alenia Space (France), Centre National d'Études Spatiales

Language: English

Topic: CCD and CMOS Imaging Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4403390582

FWCI: 0.206

Cites: 52

Cited by: 2

Related to: 10