Work

Aging Mechanisms of Broad Area ∼800 nm Laser Diodes

Year: 2024

Type: article

Source: IEEE Journal of Selected Topics in Quantum Electronics

DOI: 10.1109/jstqe.2024.3466169

Authors: Elaine D. McVay, Robert J. Deri, Salmaan H. Baxamusa, William E. Fenwick, Jiang Li, Joel B. Varley, Daniel E. Mittelberger, Luyang Wang, Kevin P. Pipe, Matthew C. Boisselle, Laina V. Gilmore, Rebecca B. Swertfeger, Mark T. Crowley, Prabhu Thiagarajan, Jiyon Song, Gerald T. Thaler, Christopher F. Schuck, Adam Dusty

Institutions: Lawrence Livermore National Laboratory, University of Michigan

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Lawrence Livermore National Laboratory

Award: G1356433355

OpenAlex ID: W4403391447

FWCI: 0.308

Cites: 37

Cited by: 3

Related to: 10