Work

Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor

Year: 2024

Type: article

Abstract: In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.

Source: Materials

DOI: 10.3390/ma17205021

Authors: Ke-Jing Lee, Cheng-Hua Wu, Cheng-Jung Lee, Dei-Wei Chou, Na-Fu Wang, Yeong-Her Wang

Institutions: Cheng Shiu University, National Cheng Kung University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,955

Funders: National Science Council, National Science and Technology Council