The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Year: 2024
Type: article
Abstract: Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) are highly promising for high-frequency and high-power applications due to their superior properties, such as a wide energy bandgap and high carrier density. The performance of GaN HEMTs is significantly influenced by the interfacial states of the AlGaN barrier, and gate annealing has emerged as a key process for reducing leakage currents and enhancing DC/RF characteristics. This research investigates the impact of gate annealing on AlGaN/GaN HEMTs, focusing on two main aspects: leakage current reduction and improvements in DC and RF efficiency. Through comprehensive electrical analysis, including DC and RF measurements, the effects of gate annealing were experimentally evaluated. The results show a significant reduction in gate leakage current and noticeable improvements in DC/RF performance for the devices that underwent gate annealing. The study confirms that the annealing process can effectively enhance device performance by modifying the material properties at the gate interface.
Source: Electronics
Authors: Junhyung Kim, Gyejung Lee, Kyujun Cho, Jong Yul Park, Byoung-Gue Min, Junhyung Jeong, Hong-Gu Ji, Woojin Chang, Jong-Min Lee, Dong-Min Kang
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,728
OpenAlex ID: W4403396513