Work

Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around Transistors

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01462

Authors: Hua Shao, Tobias Reiter, Rui Chen, Junjie Li, Ziyi Hu, Yayi Wei, Ling Li, Lado Filipovic

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, TU Wien, University of Chinese Academy of Sciences

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Chinese Academy of Sciences, Austrian Science Fund, Youth Innovation Promotion Association of the Chinese Academy of Sciences

Awards: G3048237445, G4418272321, Adsorbate-Dependent Conductivity of MoS2 FETs, G973022896

OpenAlex ID: W4403398737

FWCI: 0.822

Cites: 30

Cited by: 8

Related to: 10