The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0237616
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403401347
