Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Dun-Bao Ruan, Kuei-Shu Chang-Liao, Kai-Chun Yang, Kai-Jhih Gan
Institutions: Fuzhou University, National Tsing Hua University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1606589457, G3655295661
OpenAlex ID: W4403446238