Work

Optimal Thermal Resistance Model of GaN HEMTs Considering Thickness-Dependent Thermal Conductivity

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3474610

Authors: Xiao Ma, Kai Wang, Jingxiong Chen, Hong Wang

Institution: South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Development Plan of Shandong Province

Awards: G6316844085, G6909244109, G7158345174

OpenAlex ID: W4403447024

FWCI: 0.892

Cites: 36

Cited by: 6

Related to: 10