Work

Degradation Under Low Drain Bias Induced by Heavy Ion in SiC MOSFETs

Year: 2024

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2024.3481367

Authors: Leshan Qiu, Yun Bai, Zewei Dong, Jieqin Ding, Jilong Hao, Yidan Tang, Xiaoli Tian, Chengzhan Li, Xinyu Liu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G5080138891, G851891743

OpenAlex ID: W4403448016

FWCI: 0.833

Cites: 38

Cited by: 8

Related to: 10