Work

Electrical properties of completely compensated single-crystal Ge-on-GaAs films with two-dimension Coulomb disorder

Year: 2024

Type: article

Abstract: We present electrical properties of heavily doped and completely compensated Ge films grown on semiinsulating GaAs(100) substrates by vacuum evaporation. The thin (~100 nm) Ge films are characterized using temperature-dependent transport measurements, with anomalously large activation energy up to half the Ge bandgap, anisotropy of the transverse magnetoresistance, high resistivity (up to 140 Ω·cm), low free charge carrier mobility (~50 cm2/V·s), and concentration (~1014–1015 cm-3). This behaviour is attributed to a completely compensated semiconductors arising from Ga and As impurity incorporation and large-scale potential fluctuations. Analysis suggests a two-dimensional percolative transport mechanism in Ge-on-GaAs heterostructures.

Source: Solid State Communications

DOI: 10.1016/j.ssc.2024.115726

Author: V.F. Mitin

Institutions: National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,870

Funder: National Academy of Sciences of Ukraine