Work

High-performance deep-ultraviolet photodetector based on a single-crystalline ϵ-Ga2O3/Sn-doped In2O3 heterojunction

Year: 2024

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad8758

Authors: Shudong Hu, Ningtao Liu, Teng Li, Dongyang Han, Hao Zhuo, Botao Shao, Xiaoli Zhang, Wenrui Zhang, Feng Chen

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, High Magnetic Field Laboratory, Ningbo Institute of Industrial Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3037327512

OpenAlex ID: W4403459329

FWCI: 0.701

Cites: 43

Cited by: 9

Related to: 10