Work

Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad879e

Authors: Fei Wang, Hongchen Yu, Xue Lv, Zhicheng Wang

Institution: Shandong University of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Natural Science Foundation of Qingdao

Awards: G4597868198, G4760211099, G6448853307

OpenAlex ID: W4403459682

FWCI:

Cites: 31

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Related to: 10