Optoelectronic properties of GaP:Ti photovoltaic devices
Year: 2024
Type: article
Abstract: Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm-1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analysed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.
Source: Materials Today Sustainability
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,000
OpenAlex ID: W4403484527