Work

(010) β-(Alx, Ga1−x)2O3 growth using tritertiarybutylaluminum as Al gas precursor via hybrid molecular beam epitaxy

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0227366

Authors: Zhuoqun Wen, Xin Zhai, Kamruzzaman Khan, Oguz Odabasi, Mijung Kim, Elaheh Ahmadi

Institutions: University of Michigan, University of California, Los Angeles

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Defense Sciences Office, DARPA, Air Force Office of Scientific Research

Awards: G4406687664, G4446868012, CAREER: A novel Gallium Oxide based transistor for low-waste power conversion applications, REU Site: Semiconductor Hands-On Research Experience (SHORE)

OpenAlex ID: W4403489815

FWCI: 0.309

Cites: 50

Cited by: 4

Related to: 10