Work

Comparative Analysis of AlN/β-Ga2O3 and MgZnO/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog/RF Applications

Year: 2024

Type: article

Source: Journal of Circuits Systems and Computers

DOI: 10.1142/s0218126625501257

Authors: Yogesh Kumar Verma, Varun Mishra, Manoj Singh Adhikari, Suman Lata Tripathi, Santosh Kumar Gupta

Institutions: Lovely Professional University, Madhav Institute of Technology & Science, Motilal Nehru National Institute of Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403503639

FWCI: 0.078

Cites: 29

Cited by: 1

Related to: 10