Work

Impact of Trapped Charge on the Breakdown Phenomena in HfO2/Al2O3 — Based Memory Capacitors

Year: 2024

Type: article

Source: Journal of Circuits Systems and Computers

DOI: 10.1142/s0218126625410038

Authors: D. Spassov, A. Paskaleva, E. Guziewicz, Tz. Ivanov, T. Stanchev, V. Davidović, S. Veljković, N. Mitrović, D. Danković

Institutions: Bulgarian Academy of Sciences, Georgi Nadjakov Institute of Solid State Physics, Institute of Physics, Polish Academy of Sciences, University of Nis

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Bulgarian Academy of Sciences

Award: G6981121391

OpenAlex ID: W4403503743

FWCI:

Cites: 11

Cited by:

Related to: 10