Work

Influence of P+ Body on Performance and Ruggedness of 1.2 kV 4H-SiC MOSFETs

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3474615

Authors: Dongyoung Kim, Seung Yup Jang, Adam J. Morgan, Woongje Sung

Institution: SUNY Polytechnic Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy

OpenAlex ID: W4403511623

FWCI: 1.145

Cites: 11

Cited by: 11

Related to: 10