Work

Revisiting the epitaxy of III-Vs on group-IV substrates

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Gilbert, Audrey, Patriarche, Gilles, Cornet, C., Tournié, Eric, Ramonda, Michel, Cerutti, Laurent, Fagot, Maeva, Rodriguez, Jean-Baptiste

Institutions: Institut d'Électronique et des Systèmes, Laboratoire Photonique, Numérique et Nanosciences, Fonctions Optiques pour les Technologies de l’information, Université de Montpellier

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Equipex, Deutsche Forschungsgemeinschaft, Agence Nationale de la Recherche

Awards: G1190173965, Nucleation and growth of III-V on Si explored in situ, PhysIcAl properties of hybrid semimetal/semicoNductor III-V/Si maTerials, Centre d'Excellence sur les Antimoniures, Hybrid antimonide technologies, New strategies for dislocation density reduction in monolithic III/V epitaxy on Si

OpenAlex ID: W4403522833

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