Work

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3483730

Authors: Biao Gong, Mei Ge, Xiao Wang, Bingjie Ye, Irina Nikolaevna Parkhomenko, Fadei Fadeevich Komarov, Jin Wang, Junjun Xue, Yu Liu, Guofeng Yang

Institutions: Jiangnan University, Nantong University, Belarusian State University, Nanjing University of Posts and Telecommunications, University of Copenhagen

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G4368658771, G5561283174, G7232155262

OpenAlex ID: W4403534354

FWCI: 2.02

Cites: 30

Cited by: 14

Related to: 10