Work

Thermal Model of Silicon-Carbide and Gallium-Nitride High-Temperature Integrated Circuits

Year: 2024

Type: conference-paper

Source: International Conference on Actual Problems of Electron Devices Engineering

DOI: 10.1109/apede59883.2024.10715783

Authors: Ilya V. Frolov, Dmitriy V. Kleimenkin, Vladislav E. Chumakov

Institutions: Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Don State Technical University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Science Foundation

OpenAlex ID: W4403535251

FWCI:

Cites: 13

Cited by:

Related to: 10