Work

Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

Year: 2024

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Gilbert, Audrey, Graser, Karl, Ramonda, Michel, Trampert, Achim, Tournié, Eric, Rodriguez, Jean-Baptiste

Institutions: Institut d'Électronique et des Systèmes, Paul Drude Institute for Solid State Electronics, Institut Universitaire de France

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403564689

FWCI:

Cites:

Cited by:

Related to: 10