Work

Theoretical studies of the bipolar properties of ScAlN/AlGaN/GaN heterostructures for enhanced device applications

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad8a0d

Authors: Wei Li, Hongling Xiao, Xiaoliang Wang, Teng He, Lijuan Jiang, Chun Feng, Jiankai Xu, Qian Wang, Miao Zhou

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Chinese Academy of Sciences

OpenAlex ID: W4403625167

FWCI: 0.148

Cites: 26

Cited by: 1

Related to: 10