Work

Analysis of etched drain based Cylindrical agate‐all‐around tunnel field effect transistor based static random access memory cell design

Year: 2024

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.3296

Authors: Ankur Beohar, Ribu Mathew, Darshan Sarode, Abhishek Kumar Upadhyay, Kavita Khare

Institutions: VIT Bhopal University, Manipal Academy of Higher Education, Maulana Azad National Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403627601

FWCI: 0.617

Cites: 21

Cited by: 6

Related to: 10