Work

Simulation and Comparison of Temperature-Dependent Capacitance of MOS Quantum Dot Devices with PbSe and PbTe on TiO 2 Dielectric Layer

Year: 2024

Type: conference-paper

Source: International Conference on Applying New Technology in Green Buildings (ATiGB)

DOI: 10.1109/atigb63471.2024.10717809

Authors: Pradeep Bhonasu, Naga Anudeep Gayala, J. Cyril Robinson Azariah

Institution: Saveetha University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403635910

FWCI:

Cites: 20

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Related to: 10