Work

On Electrophysical Properties of Metal Oxide Memristors

Year: 2024
Type: conference-paper
Abstract: A non-stationary one-dimensional physical and mathematical model of mass transfer of oxygen vacancies and trapped electrons in a selfconsistent electric field is presented, this model allows to determine the influence of temperature on the electrophysical properties of metal oxide memristors
Authors: Akeksandr Busygin, B. Gabdulin, Sergey Udovichenko, N. Shulaev, A. Pisarev, A. Ebrahim
Language: English
Open Access status: bronze
OpenAlex ID: W4403674207
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